12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode

Optics Express
Suguru AkiyamaTatsuya Usuki

Abstract

We present high-speed operation of pin-diode-based silicon Mach-Zehnder modulators that have side-wall gratings on both sides of the waveguide core. The use of pre-emphasis signals generated with a finite impulse response digital filter was examined in the frequency domain to show how the filter works for different filter parameter sets. In large signal modulation experiments, V(π)L as low as 0.29 V·cm was obtained at 12.5 Gb/s using a fabricated modulator and the pre-emphasis technique. Operation of up to 25-Gb/s is possible using basically the same driving configurations.

References

Apr 18, 2005·Optics Express·Ling LiaoThorkild Franck
Jan 22, 2007·Optics Express·Qianfan XuMichal Lipson
Dec 10, 2007·Optics Express·William M GreenYurii A Vlasov
Jan 26, 2011·Optics Express·Hui-Wen ChenJohn E Bowers
Jul 1, 2011·Optics Express·D J ThomsonG T Reed
Jul 13, 2011·Optics Express·Hong C NguyenToshihiko Baba
Oct 15, 2011·Optics Express·Guoliang LiAshok V Krishnamoorthy

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Citations

Jun 6, 2013·Optics Express·Takeshi BabaTatsuya Usuki
Apr 11, 2014·Optics Express·Younghyun KimShinichi Takagi
Apr 4, 2015·Optics Express·Harish SubbaramanRay T Chen
Oct 6, 2012·Optics Express·Hong C NguyenToshihiko Baba

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