1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon

Optics Express
Ying XueKei May Lau

Abstract

Realization of fully integrated silicon photonics has been handicapped by the lack of a reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous wave (CW) lasing and operation sustainable at high temperatures are critical for practical applications. Here, we present the first electrically pumped room temperature (RT) CW lasing results of 1.55 μm quantum dash (QDash) lasers directly grown on patterned on-axis (001) Si using metal organic chemical vapor deposition (MOCVD). Adopting a dash-in-well structure as the active medium, the growth of QDash was optimized on an InP on Si template. Incorporating the advantages of the optimized material growth and device fabrication, good laser performance including a low threshold current of 50 mA, a threshold current density of 1.3 kA/cm2 and operation at elevated temperature up to 59 °C in CW mode was achieved. Comparison of lasers grown on Si and native InP substrates in the same growth run was made. Based on the laser characteristics measured at room temperature and elevated temperatures, the QDash quality on the two substrates is comparable. These results suggest that MOCVD is a viable technique for lasers on Si growth and represent an advance toward...Continue Reading

Citations

Mar 9, 2021·Nanoscale·Mingming JiangCaixia Kan
Apr 7, 2021·Optics Express·Laura Monge-BartolomeEric Tournié
Sep 28, 2021·Light, Science & Applications·Zhao YanKei May Lau

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