25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions

Optics Express
Xi XiaoJinzhong Yu

Abstract

A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal-oxide-semiconductor processes and provides low V(π)L(π)s of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 10(17) cm(-3). The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.

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Citations

Jun 12, 2014·Nature Communications·Erman TimurdoganMichael R Watts
Jan 29, 2016·Scientific Reports·Ge GaoJinsong Xia
Feb 8, 2013·Optics Express·Aleksandr BibermanMichael R Watts
Nov 29, 2012·Optics Express·J C RosenbergY A Vlasov
Oct 17, 2014·Optics Express·Wesley D SacherJoyce K S Poon
Sep 22, 2018·Physical Review Letters·Adam MockAndrea Alù
Jul 10, 2012·Optics Express·Yingtao HuJinzhong Yu
Jul 21, 2015·Optics Express·Y SivanA P Mosk
Jun 21, 2012·Optics Express·Lin YangQianfan Xu

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