310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection

Optics Express
Ning DuanG Q Lo

Abstract

We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high responsivity of 12 A/W and a large gain-bandwidth product of 310 GHz have been achieved at 1550 nm.

References

Apr 1, 2011·Optics Express·Yun-Sok ShinMoon-Ho Jo

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Citations

Sep 19, 2014·Nature Communications·Léopold VirotLaurent Vivien
Aug 25, 2016·Optics Express·Nicholas J D MartinezPaul S Davids
Jun 13, 2014·Optics Express·Yi ZhangMichael Hochberg
Jan 22, 2015·Optics Express·Shuyu YangMichael Hochberg
Nov 10, 2016·Optics Express·Shiyu XieChee Hing Tan

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