40 Gbit/s low-loss silicon optical modulator based on a pipin diode

Optics Express
M ZiebellL Vivien

Abstract

40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.

References

Jan 22, 2007·Optics Express·Ansheng LiuMario Paniccia
Nov 3, 2010·Optics Letters·Gilles RasigadeLaurent Vivien
Apr 1, 2011·Optics Express·Gilles RasigadeLaurent Vivien
Jul 1, 2011·Optics Express·D J ThomsonG T Reed
Jul 1, 2011·Optics Express·F Y GardesG T Reed

❮ Previous
Next ❯

Citations

Oct 6, 2012·Optics Express·Hong C NguyenToshihiko Baba
Mar 26, 2014·Optics Express·D Marris-MoriniL Vivien
Apr 16, 2014·Science and Technology of Advanced Materials·Toshihiko BabaTomohiko Watanabe
Nov 29, 2012·Optics Express·J C RosenbergY A Vlasov
Jan 22, 2015·Optics Express·Yan YangGuo-Qiang Lo
Apr 1, 2020·Applied Optics·Darpan Mishra, Ramesh Kumar Sonkar
Feb 12, 2014·Optics Express·Matthew StreshinskyMichael Hochberg
Jan 14, 2021·Light, Science & Applications·Darius UrbonasThilo Stöferle
Jan 16, 2021·Scientific Reports·Rubab AminVolker J Sorger

❮ Previous
Next ❯

Related Concepts

Related Feeds

Cell Imaging in CNS

Here is the latest research on cell imaging and imaging modalities, including light-sheet microscopy, in the central nervous system.