560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates

Optics Express
Michel KhourySteven P DenBaars

Abstract

We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy observations, we discuss how the management of misfit dislocations and their confinement in areas away from the active light-emitting region is necessary for improving device performance. We also discuss how the patterning of semipolar GaN on sapphire influences material properties in terms of surface roughness and undesired faceting in addition to indium segregation at the proximity of defected areas.

References

Aug 30, 2006·Ultramicroscopy·K ThompsonB Gorman
Jul 3, 2007·Nature Materials·Tadao HashimotoShuji Nakamura
Jan 17, 2015·Nano Letters·Matthew K HortonMichelle A Moram
Aug 10, 2016·Optics Express·Abdullah I AlhassanJames S Speck
Nov 27, 2019·ACS Applied Materials & Interfaces·Michel KhourySteven P DenBaars

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