A facile route for the fabrication of large-scale gate-all-around nanofluidic field-effect transistors with low leakage current

Lab on a Chip
Sangwoo ShinHyung Hee Cho

Abstract

Active modulation of ions and molecules via field-effect gating in nanofluidic channels is a crucial technology for various promising applications such as DNA sequencing, drug delivery, desalination, and energy conversion. Developing a rapid and facile fabrication method for ionic field-effect transistors (FET) over a large area may offer exciting opportunities for both fundamental research and innovative applications. Here, we report a rapid, cost-effective route for the fabrication of large-scale nanofluidic field-effect transistors using a simple, lithography-free two-step fabrication process that consists of sputtering and barrier-type anodization. A robust alumina gate dielectric layer, which is formed by anodizing sputtered aluminium, can be rapidly fabricated in the order of minutes. When anodizing aluminium, we employ a hemispherical counter electrode in order to give a uniform electric field that encompasses the whole sputtered aluminium layer which has high surface roughness. In consequence, a well-defined thin layer of alumina with perfect step coverage is formed on a highly rough aluminium surface. A gate-all-around nanofluidic FET with a leak-free gate dielectric exhibits outstanding gating performance despite a la...Continue Reading

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Citations

Apr 11, 2013·Biomicrofluidics·Chuanhua DuanQuan Xie
Nov 19, 2014·Analytical Chemistry·Daniel G HaywoodStephen C Jacobson
Mar 3, 2015·Nano Letters·Marie FuestShaurya Prakash
Oct 8, 2016·Lab on a Chip·Shaurya Prakash, A T Conlisk
Feb 18, 2017·Analytical Chemistry·Marie FuestShaurya Prakash
Mar 29, 2016·ACS Nano·Yifan Liu, Levent Yobas

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