A foundation for complex oxide electronics -low temperature perovskite epitaxy.

Nature Communications
Henrik H SønstebyOla Nilsen

Abstract

As traditional silicon technology is moving fast towards its fundamental limits, all-oxide electronics is emerging as a challenger offering principally different electronic behavior and switching mechanisms. This technology can be utilized to fabricate devices with enhanced and exotic functionality. One of the challenges for integration of complex oxides in electronics is the availability of appreciable low-temperature synthesis routes. Herein we provide a fundamental extension of the materials toolbox for oxide electronics by reporting a facile route for deposition of highly electrically conductive thin films of LaNiO3 by atomic layer deposition at low temperatures. The films grow epitaxial on SrTiO3 and LaAlO3 as deposited at 225 °C, with no annealing required to obtain the attractive electronic properties. The films exhibit resistivity below 100 µΩ cm with carrier densities as high as 3.6 · 1022 cm-3. This marks an important step in the realization of all-oxide electronics for emerging technological devices.

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Citations

May 13, 2021·Dalton Transactions : an International Journal of Inorganic Chemistry·Per-Anders Hansen, Ola Nilsen
Sep 17, 2021·Scientific Reports·V A TurchenkoA V Trukhanov

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Methods Mentioned

BETA
chemical vapor deposition
transmission
X-ray
transmission electron microscopy

Software Mentioned

Thermo Avantage
Gatan Microscopy Suite

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