A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory

Nanoscale
Huajing FangQingfeng Yan

Abstract

We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 10(3). More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.

References

Mar 11, 2010·Advanced Materials·Ronald C G NaberBert de Boer
Mar 30, 2010·Nature Nanotechnology·Sheng XuZhong Lin Wang
Feb 24, 2011·IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control·Dan ZhouHelen Lai Wa Chan
Aug 6, 2011·Advanced Materials·Ashutosh K TripathiGerwin H Gelinck
Aug 22, 2013·Nanoscale·He TianTian-Ling Ren
Sep 17, 2013·ACS Nano·Mengdi HanHaixia Zhang
Oct 15, 2013·Angewandte Chemie·Zong-Hong LinZhong Lin Wang
Mar 7, 2014·Nature Communications·Guang ZhuZhong Lin Wang
Mar 29, 2014·Advanced Materials·Seongsu KimSang-Woo Kim

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