A Nanojunction Polymer Photoelectrode for Efficient Charge Transport and Separation

Angewandte Chemie
Qiushi RuanJunwang Tang

Abstract

A metal-free photoanode nanojunction architecture, composed of B-doped carbon nitride nanolayer and bulk carbon nitride, was fabricated by a one-step approach. This type of nanojunction (s-BCN) overcomes a few intrinsic drawbacks of carbon nitride film (severe bulk charge recombination and slow charge transfer). The top layer of the nanojunction has a depth of ca. 100 nm and the bottom layer is ca. 900 nm. The nanojunction photoanode results into a 10-fold higher photocurrent than bulk graphitic carbon nitride (G-CN) photoanode, with a record photocurrent density of 103.2 μA cm-2 at 1.23 V vs. RHE under one sun irradiation and an extremely high incident photon-to-current efficiency (IPCE) of ca. 10 % at 400 nm. Electrochemical impedance spectroscopy, Mott-Schottky plots, and intensity-modulated photocurrent spectroscopy show that such enhancement is mainly due to the mitigated deep trap states, a more than 10 times faster charge transfer rate and nearly three times higher conductivity due to the nanojunction architecture.

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Citations

Jul 19, 2018·Angewandte Chemie·Michael VolokhMenny Shalom
Jun 6, 2019·Chemical Communications : Chem Comm·Qiushi RuanJunwang Tang
Oct 15, 2019·Advanced Materials·Siddulu Naidu TalapaneniAjayan Vinu
Jan 16, 2020·Journal of the American Chemical Society·Qiushi RuanJunwang Tang
Aug 21, 2019·Journal of the American Chemical Society·Shice WeiFan Zhang
Dec 24, 2021·Dalton Transactions : an International Journal of Inorganic Chemistry·Teng HouLei Wang

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Methods Mentioned

BETA
NMR

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