Addressable electron spin resonance using donors and donor molecules in silicon

Science Advances
Samuel J HileMichelle Y Simmons

Abstract

Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donors with separations ~15 nm is challenging. We show that by using atomic precision lithography, we can place a single P donor next to a 2P molecule 16 ± 1 nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular, the single donor yields two hyperfine peaks separated by 97 ± 2.5 MHz, in contrast to the donor molecule that exhibits three peaks separated by 262 ± 10 MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an interdonor separation of ~0.7 nm, consistent with lithographic scanning tunneling microscopy images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.

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Citations

Sep 17, 2020·Science Advances·Mateusz T MądzikAndrea Morello
Jun 5, 2021·Nature Communications·Lukas FrickeMichelle Y Simmons
Mar 7, 2020·ACS Nano·Taylor J Z StockNeil J Curson
Nov 20, 2021·Nano Letters·Matthew B DonnellyMichelle Y Simmons
Aug 1, 2019··Michelle Y. Simmons, Michelle Y. Simmons

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Methods Mentioned

BETA
ESR
scanning electron microscopy
chip
nuclear magnetic resonance
electron beam lithography

Software Mentioned

NEMO
3D

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