Ambipolar ferromagnetism by electrostatic doping of a manganite

Nature Communications
L M ZhengW W Cao

Abstract

Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO3, with electron-hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron-hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.

References

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Citations

Aug 23, 2018·Advanced Materials·Zhen HuangThirumalai Venkatesan
Nov 23, 2018·Nanoscale·Cong WangWei Ji
Feb 13, 2020·Advanced Materials·Han YanZhiqi Liu
May 28, 2019·Nature Materials·Denis G BaranovMikhail A Kats
Aug 25, 2020·Science Advances·Jeff WalterChris Leighton
Sep 17, 2020·Science Advances·Jeff WalterChris Leighton
Aug 3, 2019·ACS Applied Materials & Interfaces·Shu-Jui ChangYuan-Chieh Tseng

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Methods Mentioned

BETA
transmission electron microscopy
atomic force microscopy
electron diffraction

Software Mentioned

Vienna ab initio simulation
MatLab

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