An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions

Advanced Materials
Hongwei TanRun-Wei Li

Abstract

A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2- x/AlOy/Al structure, is demonstrated. Arising from the photo-induced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.

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Citations

Dec 28, 2018·Advanced Materials·Minh Dao TranYoung Hee Lee
Oct 27, 2015·Nanoscale Research Letters·Yang LiMing Liu
Jul 17, 2019·Nature Nanotechnology·Feichi ZhouYang Chai
Sep 25, 2019·Research : a Science Partner Journal·Feichi ZhouYang Chai
Mar 22, 2019·Nature Communications·Zhibin ShaoJiansheng Jie
Jun 30, 2019·Journal of Colloid and Interface Science·Bai SunYong Zhao
Apr 20, 2021·Frontiers in Neuroscience·Jiajuan ShiYichun Liu
Jun 18, 2021·Nano-micro Letters·Wen HuangXing'ao Li
Feb 2, 2018·ACS Applied Materials & Interfaces·Dan-Chun HuXin Guo
Feb 6, 2019·ACS Applied Materials & Interfaces·Zheng-Dong LuoMarin Alexe
Jul 4, 2019·ACS Applied Materials & Interfaces·Sung Hyun KimKyung-Hwa Yoo
Nov 25, 2017·ACS Applied Materials & Interfaces·Qiang ZhaoWenping Hu
Oct 14, 2017·ACS Nano·Hongwei TanRun-Wei Li

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