Analysis of Ge micro-cavities with in-plane tensile strains above 2

Optics Express
R W MillarD J Paul

Abstract

Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 μm, and the highest strained samples demonstrate in-plane, tensile strains of > 2 %, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present in circular cavities, which can detrimentally effect the carrier concentration for direct band transitions. The advantages and disadvantages of each type of proposed cavity structure are discussed.

References

Mar 3, 2010·Optics Letters·Jifeng LiuJurgen Michel
Nov 16, 2011·Proceedings of the National Academy of Sciences of the United States of America·Jose R Sánchez-PérezRoberto Paiella
May 9, 2012·Optics Express·Rodolfo E Camacho-AguileraJurgen Michel
Apr 4, 2015·Optics Express·M ProstP Boucaud
Oct 13, 2015·Nano Letters·Leonetta BaldassarrePaolo Biagioni

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Citations

Jun 22, 2019·Nature Communications·F T Armand PilonH Sigg
Jan 18, 2019·Optics Express·Abdelrahman Z Al-AttiliShinichi Saito
Mar 23, 2019·Scientific Reports·Arman AyanSelcuk Yerci
Apr 7, 2017·Optics Express·Xuejun XuTakuya Maruizumi

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