Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb₂O₅-NaNbO₃ thin films

Scientific Reports
Linglong LiYaodong Yang

Abstract

Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb₂O₅-NaNbO₃ nanocomposite thin films on SrRuO₃-buffered LaAlO₃ substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.

References

Jan 31, 2004·Science·H ZhengR Ramesh
Nov 2, 2004·Nature·Yasuyoshi SaitoMasaya Nakamura
May 3, 2008·Nature·Dmitri B StrukovR Stanley Williams
Jul 26, 2008·Nature Nanotechnology·N B ZhitenevR A Cirelli
Jul 26, 2008·Nature Nanotechnology·J Joshua YangR Stanley Williams
Sep 10, 2010·Science and Technology of Advanced Materials·Serhiy O Leontsev, Richard E Eitel

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Citations

Jan 8, 2016·Scientific Reports·M A ZidanK N Salama

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Methods Mentioned

BETA
atomic force microscopy
transmission electron microscopy
AFM
transmission
X-ray

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