Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory

Physical Chemistry Chemical Physics : PCCP
Shengjun QinZhiping Yu

Abstract

The growth dynamics for metallic filaments in conductive-bridge resistive-switching random access memory (CBRAM) are studied using the kinetic Monte Carlo (KMC) method. The physical process at the atomistic level is revealed in explaining the experimental observation that filament growth can originate at either the cathode or the anode. The statistical nature of the filament growth is best shown by the random topography of dendrite-like conductive paths obtained. Critical material properties, such as charged-particle mobility in the switching layer of a solid electrolyte or a dielectric, are mapped to KMC model parameters through activation energy, etc. The accuracy of the simulator is established by the good agreement between the simulated forming time and the measured data.

References

Jan 7, 2005·Nature·K TerabeM Aono
Nov 2, 2007·Nature Materials·Rainer Waser, Masakazu Aono
Mar 15, 2012·Nature Communications·Yuchao YangWei Lu
Apr 4, 2013·Physical Chemistry Chemical Physics : PCCP·Stephan MenzelIlia Valov
Mar 19, 2014·Advanced Materials·Xuezeng TianXuedong Bai
Jun 24, 2014·Nature Communications·Yuchao YangWei D Lu

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