Bilayer graphene grown on 4H-SiC (0001) step-free mesas

Nano Letters
L O NyakitiD K Gaskill

Abstract

We demonstrate the first successful growth of large-area (200 × 200 μm(2)) bilayer, Bernal stacked, epitaxial graphene (EG) on atomically flat, 4H-SiC (0001) step-free mesas (SFMs) . The use of SFMs for the growth of graphene resulted in the complete elimination of surface step-bunching typically found after EG growth on conventional nominally on-axis SiC (0001) substrates. As a result heights of EG surface features are reduced by at least a factor of 50 from the heights found on conventional substrates. Evaluation of the EG across the SFM using the Raman 2D mode indicates Bernal stacking with low and uniform compressive lattice strain of only 0.05%. The uniformity of this strain is significantly improved, which is about 13-fold decrease of strain found for EG grown on conventional nominally on-axis substrates. The magnitude of the strain approaches values for stress-free exfoliated graphene flakes. Hall transport measurements on large area bilayer samples taken as a function of temperature from 4.3 to 300 K revealed an n-type carrier mobility that increased from 1170 to 1730 cm(2) V(-1) s(-1), and a corresponding sheet carrier density that decreased from 5.0 × 10(12) cm(-2) to 3.26 × 10(12) cm(-2). The transport is believed to...Continue Reading

References

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Citations

Sep 28, 2015·Micron : the International Research and Review Journal for Microscopy·K GrodeckiW Strupinski
Jan 18, 2014·Physical Chemistry Chemical Physics : PCCP·Wataru Norimatsu, Michiko Kusunoki
Sep 22, 2015·Physical Chemistry Chemical Physics : PCCP·Chiun-Yan LinMing-Fa Lin
May 18, 2016·Nanoscale·I PasternakW Strupinski
Aug 20, 2014·Small·Yanfei YangRandolph E Elmquist
Sep 28, 2017·Physical Chemistry Chemical Physics : PCCP·Lu WangYanhui Yang
Jul 29, 2020·Nature Nanotechnology·Van Luan NguyenYoung Hee Lee
Jan 12, 2013·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Qingyan WangQikun Xue

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