Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer

Nanoscale
Sijung YooCheol Seong Hwang

Abstract

The mechanism of bipolar resistive switching (BRS) of amorphous Ge2Sb2Te5 (GST) thin films sandwiched between inert electrodes (Ti and Pt) was examined. Typical bipolar resistive switching behavior with a high resistance ratio (∼10(3)) and reliable switching characteristics was achieved. High-resolution transmission electron microscopy revealed the presence of a conductive Te-filament bridging between the top and bottom electrodes through an amorphous GST matrix. The conduction mechanism analysis showed that the low-resistance state was semiconducting and dominated by band transport, whereas Poole-Frenkel conduction governed the carrier transport in the high-resistance state. Thus, the BRS behavior can be attributed to the formation and rupture of the semiconducting conductive Te bridge through the migration of the Te ions in the amorphous GST matrix under a high electric field. The Te ions are provided by the thin (∼5 nm) Te-rich layer formed at the bottom electrode interface.

References

Dec 19, 2006·Nature Materials·Matthias WuttigRichard Dronskowski
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Citations

May 26, 2018·Physical Chemistry Chemical Physics : PCCP·Xinran CaoJianlu Wang
Dec 19, 2018·Scientific Reports·M Kazar MendesN Barrett
Aug 24, 2018·Scientific Reports·Ziyang ZhangHuanglong Li
Jan 18, 2020·Nano Letters·Isha M DatyeEric Pop
Sep 25, 2019·ACS Applied Materials & Interfaces·Woohyun KimCheol Seong Hwang
Oct 21, 2021·Nanotechnology·S TappertzhofenR Waser

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