Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts

ACS Applied Materials & Interfaces
Ghulam DastgeerJonghwa Eom

Abstract

There have been a few studies of heterojunctions composed of two-dimensional transition-metal dichalcogenides (TMDs) and an oxide layer, but such studies of high-performance electric and optoelectronic devices are essential. Such heterojunctions with low-resistivity metal contacts are needed by the electronics industry to fabricate efficient diodes and photovoltaic devices. Here, a van der Waals heterojunction composed of p-type black phosphorus (p-BP) and n-type indium-gallium-zinc oxide (n-IGZO) films with low-resistivity metal contacts is reported, and it demonstrates high rectification. The low off-state leakage current in the thick IGZO film accounts for the high rectification ratio in a sharp interface of p-BP/n-IGZO devices. For electrostatic gate control, an ionic liquid is introduced to achieve a high rectification ratio of 9.1 × 104. The photovoltaic measurements of p-BP/n-IGZO show fast rise and decay times, significant open-circuit voltage and short-circuit current, and a high photoresponsivity of 418 mA/W with a substantial external quantum efficiency of 12.1%. The electric and optoelectronic characteristics of TMDs/oxide layer van der Waals heterojunctions are attractive for industrial applications in the near fut...Continue Reading

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Mar 27, 2018·ACS Applied Materials & Interfaces·Ghulam DastgeerJonghwa Eom
Oct 30, 2018·ACS Applied Materials & Interfaces·Min-Kyu SongJang-Yeon Kwon
Nov 7, 2018·ACS Applied Materials & Interfaces·Shuangqing FanJing Liu

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Citations

Sep 22, 2020·Nanotechnology·Daqing LiShaoqing Xiao
Dec 8, 2021·Dalton Transactions : an International Journal of Inorganic Chemistry·Ehsan ElahiPradeep Raj Sharma

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