Broadened band near-perfect absorber based on amorphous silicon metasurface

Optics Express
Jiangnan SiXiaoxu Deng

Abstract

A dielectric broadened band near-perfect absorber based on an amorphous silicon(a-Si) T-shaped nanostructure metasurface is investigated numerically and experimentally. The simultaneous suppressed transmission and reflection of the a-Si nanostructure metasurface are achieved by investigating the interference of the periodically adjustable electric dipole(ED) and magnetic dipole(MD) Mie resonances. The absorption of the a-Si nanostructure metasurface approaches the maximum of 95% in simulation and 80% in experiment with a top-hat shape in the spectral range from 580 nm to 620 nm by employing the T-shaped nanostructure. The proposed near-perfect absorber provides a new approach for expanding absorption bandwidth by integrating different nanostructures in metasurface, which is potentially applicable in nanophotonic fields of optical isolation, optical trapping and energy harvesting.

References

Feb 12, 2014·Optics Express·Francisco J BezaresJoshua D Caldwell
Nov 20, 2016·Science·Arseniy I KuznetsovBoris Luk'yanchuk
May 29, 2018·Optics Express·Wei Liu, Yuri S Kivshar
Nov 2, 2018·Optics Letters·Viktoriia E Babicheva, Andrey B Evlyukhin
Mar 7, 2019·Scientific Reports·Pavel D TerekhovAlina Karabchevsky
Apr 11, 2019·Scientific Reports·Sara MagdiMohamed A Swillam

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Citations

Apr 7, 2021·Optics Express·Kebin FanWillie J Padilla

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