Carrier polarity modulation of molybdenum ditelluride (MoTe2 ) for phototransistor and switching photodiode applications

Nanoscale
Sikandar AftabMuhammad Waqas Iqbal

Abstract

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are layered semiconductor materials that have recently emerged as promising candidates for advanced nano- and photoelectronic applications. Previously, various doping methods, such as surface functionalization, chemical doping, substitutional doping, surface charge transfer, and electrostatic doping, have been introduced, but they are not stable or efficient. In this study, we have developed carrier polarity modulation of molybdenum ditelluride (MoTe2) for the development of phototransistors and switching photodiodes. Initially, we treated p-MoTe2 in a N2 environment under DUV irradiation and found that the p-type MoTe2 changed to n-type MoTe2. However, the treated devices exhibited environmental stability over a long period of 60 days. Kelvin probe force microscopy (KPFM) measurements demonstrated that the values of the work function for p-MoTe2 and n-MoTe2 were ∼4.90 and ∼4.49 eV, respectively, which confirmed the carrier tunability. Also, first-principles studies were performed to confirm the n-type carrier polarity variation. Interestingly, the n-type MoTe2 reversed its polarity to p-type after the irradiation of the devices under DUV in an O2 environment. Additio...Continue Reading

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Citations

Feb 4, 2021·Nanotechnology·Sikandar AftabMuhammad Zahir Iqbal
Jul 3, 2021·Journal of Colloid and Interface Science·Sikandar AftabMuhammad Zahir Iqbal

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Methods Mentioned

BETA
optical microscopy
electron-beam lithography
atomic force microscopy
AFM
chemical treatment

Software Mentioned

WIEN2k

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