Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

ACS Applied Materials & Interfaces
Jihang LeeWei D Lu

Abstract

Resistive random-access memory (RRAM) devices have attracted broad interest as promising building blocks for high-density nonvolatile memory and neuromorphic computing applications. Atomic level thermodynamic and kinetic descriptions of resistive switching (RS) processes are essential for continued device design and optimization but are relatively lacking for oxide-based RRAMs. It is generally accepted that RS occurs due to the redistribution of charged oxygen vacancies driven by an external electric field. However, this assumption contradicts the experimentally observed stable filaments, where the high vacancy concentration should lead to a strong Coulomb repulsion and filament instability. In this work, through predictive atomistic calculations in combination with experimental measurements, we attempt to understand the interactions between oxygen vacancies and the microscopic processes that are required for stable RS in a Ta2O5-based RRAM. We propose a model based on a series of charge transition processes that explains the drift and aggregation of vacancies during RS. The model was validated by experimental measurements where illuminated devices exhibit accelerated RS behaviors during SET and RESET. The activation energies o...Continue Reading

References

May 3, 2008·Nature·Dmitri B StrukovR Stanley Williams
Jul 26, 2008·Nature Nanotechnology·J Joshua YangR Stanley Williams
Mar 15, 2012·Nature Communications·Yuchao YangWei Lu
Dec 28, 2012·Nature Nanotechnology·J Joshua YangDuncan R Stewart
Sep 24, 2013·Nanoscale·Yuchao Yang, Wei Lu
Jun 24, 2014·Nature Communications·Yuchao YangWei D Lu
Jul 21, 2015·Advanced Materials·Jui-Yuan ChenWen-Wei Wu
May 23, 2017·Nature Nanotechnology·Patrick M SheridanWei D Lu
Oct 7, 2017·Advanced Materials·Jihang Lee, Wei D Lu

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Citations

Feb 16, 2021·The Journal of Physical Chemistry Letters·Mousam Charan SahuSatyaprakash Sahoo
Jul 3, 2021·Materials·Zhenzhong ZhangKailiang Zhang
Oct 11, 2019·ACS Applied Materials & Interfaces·Haizhong ZhangDiing Shenp Ang

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