Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

Nanotechnology
Elissa RocheAgnès Trassoudaine

Abstract

Widegap III-nitride alloys have enabled new classes of optoelectronic devices including light emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their operating wavelength to the yellow-red band. This requires an increased In content x in In x Ga1-x N, prevented by the indium segregation within the miscibility gap. Beyond the known advantage of dislocation-free growth on dissimilar substrates, nanowires may help to extend the compositional range of InGaN. However, the necessary control over the material homogeneity is still lacking. Here, we present In x Ga1-x N nanowires grown by hydride vapor phase epitaxy on silicon substrates, showing rather homogeneous compositions and emitting from blue to red. The InN fraction in nanowires is tuned from x = 0.17 up to x = 0.7 by changing the growth temperature between 630 °C and 680 °C and adjusting some additional parameters. A dedicated model is presented, which attributes the wide compositional range of nanowires to the purely kinetic growth regime of self-catalyzed InGaN nanowires without macroscopic nucleation. These results may pave a new way for the controlled synthesis of indium-rich InGaN structures for optoelectronic applications in the extended...Continue Reading

References

Oct 30, 2007·Nature Materials·Tevye KuykendallPeidong Yang
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Jun 23, 2016·Nano Letters·Yong-Ho RaZetian Mi

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Citations

Nov 21, 2018·Nanotechnology·Mohammed ZeghouaneAgnès Trassoudaine
Oct 23, 2020·Nanotechnology·Masoomeh GhasemiJonas Johansson
May 12, 2021·Nanotechnology·Vladislav O GridchinGeorge G Cirlin
Jan 7, 2022·Nanoscale·Alexey D BolshakovPavel Ginzburg

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