Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaO x -p-GaN heterojunction

Nanotechnology
J L ZhaoX W Sun

Abstract

Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaO x is employed as the intermediate layer and an n-ZnO-TaO x -p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaO x layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.

References

Jun 28, 2012·Nanoscale Research Letters·Sheikh Ziaur RahamanMing-Jinn Tsai
Nov 13, 2013·Optics Express·Zabu KyawHilmi Volkan Demir
Sep 19, 2014·Nanoscale Research Letters·Chia-Fong DuHsu-Cheng Hsu

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