Complementary p- and n-type polymer doping for ambient stable graphene inverter

ACS Nano
Je Moon YunSang Ouk Kim

Abstract

Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

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Citations

Jan 27, 2016·ACS Nano·Pablo Solís-FernándezHiroki Ago
Jan 22, 2015·Advanced Materials·Wentao XuTae-Woo Lee
Feb 24, 2015·Small·Vinh Quang DangNae-Eung Lee
Aug 18, 2016·Nanoscale·Vitaly V Chaban, Oleg V Prezhdo
Sep 8, 2016·Accounts of Chemical Research·Shigeru AmemiyaJiyeon Kim
Oct 11, 2017·The Journal of Physical Chemistry Letters·Jung Hoon SongYong-Hyun Kim
Sep 24, 2019·ACS Applied Materials & Interfaces·Ho Jin LeeSang Ouk Kim
Nov 21, 2019·ACS Applied Materials & Interfaces·Myungwoo SonMoon-Ho Ham

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