Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics

Nanoscale
Xiao Long DengBae Ho Park

Abstract

By confining columnar grains of textured oxide film using anodized aluminum oxide template, we could obtain a grain-boundary-free (GB-free) cuprous oxide (Cu(2)O) nanowire arrays with a narrow diameter distribution and a high density under the same electrochemical deposition condition. A two-terminal device fabricated using an individual GB-free nanowire and Au/Cr electrodes exhibits bipolar resistive switching contrary to the unipolar one of a textured film, and Schottky-like conduction. On the other hand, a nanowire device with Pt electrodes reveals non-switching behavior and Ohmic conduction. Thus, we can propose that the bipolar switching of a nanowire device with Au/Cr electrodes may result from the modulation of Schottky barrier at the interface by migration of oxygen vacancies while the unipolar one of a textured film may be defined as the bulky filamentary switching along the GBs in the GB-embedded texture films.

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Citations

Sep 18, 2014·Chemical Communications : Chem Comm·Bai SunPeng Chen
Aug 28, 2014·ACS Applied Materials & Interfaces·Kai-De LiangYu-Lun Chueh
Nov 7, 2012·Journal of Colloid and Interface Science·Yanbo DingJiupeng Zhao
Feb 17, 2015·Physical Chemistry Chemical Physics : PCCP·Bai Sun, Chang Ming Li
Apr 25, 2017·Physical Chemistry Chemical Physics : PCCP·L J WeiJ Du
May 20, 2017·Scientific Reports·Chi-Hsin HuangYu-Lun Chueh

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