Copolymers of poly(3-thiopheneacetic acid) with poly(3-hexylthiophene) as hole-transporting material for interfacially engineered perovskite solar cell by modulating band positions for higher efficiency
Abstract
In order to tune the band positions of the hole-transporting material (HTM) in an interfacially engineered perovskite solar cell (PSC), random copolymers of poly(3-thiopheneacetic acid) and poly(3-hexylthiophene) (P3TAA-co-P3HT) with different compositions were produced by oxidative polymerization. The copolymers were characterized using 1H NMR, FTIR, and UV-vis spectroscopy and gel permeation chromatography. Here, ZnO nanoparticles were used as the electron-transporting material (ETM) and methylammonium lead iodide (MAPbI3) perovskite was used as the light-absorbing material to form an FTO/ZnO/MAPbI3/copolymer/Ag device, of which the power conversion efficiency (PCE) was found to be dependent on the copolymer composition and reached a maximum (∼10%) at a P3TAA content of 43 mol% in the copolymer (P3). The band gaps of the copolymers as determined from UV-vis spectroscopy and cyclic voltammetry exhibit a staggered-gap hetero-interface configuration in which the HOMO and LUMO of P3 closely match those of MAPbI3 and give rise to the maximum PCE. Time-resolved photoluminescence spectra of MAPbI3/HTM samples indicate that charge transfer across the perovskite/copolymer interface was faster with a reduced recombination rate for a P3...Continue Reading
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