Current saturation and voltage gain in bilayer graphene field effect transistors

Nano Letters
B N SzafranekH Kurz

Abstract

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications. In the present work, we show that the voltage gain of GFETs can be improved significantly by using bilayer graphene, where a band gap is introduced through a vertical electric displacement field. At a displacement field of -1.7 V/nm the bilayer GFETs exhibit an intrinsic voltage gain up to 35, a factor of 6 higher than the voltage gain in corresponding monolayer GFETs. The transconductance, which limits the cutoff frequency of a transistor, is not degraded by the displacement field and is similar in both monolayer and bilayer GFETs. Using numerical simulations based on an atomistic p(z) tight-binding Hamiltonian we demonstrate that this approach can be extended to sub-100 nm gate lengths.

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Citations

May 30, 2013·ACS Nano·Erica GuerrieroRoman Sordan
Oct 7, 2014·Nature Nanotechnology·Gianluca FioriLuigi Colombo
Sep 6, 2013·Scientific Reports·Daniel SchallHeinrich Kurz
Oct 30, 2015·Scientific Reports·Kaoru Kanayama, Kosuke Nagashio
Jan 14, 2016·Physical Chemistry Chemical Physics : PCCP·Sheng Sun, Tong-Yi Zhang
Feb 12, 2019·Nanoscale·Carlo GilardiRoman Sordan
Aug 26, 2018·Nature Communications·Faisal AhmedWon Jong Yoo
Mar 24, 2020·Physical Review Letters·Vasileios BalosMohsen Sajadi
Nov 15, 2012·Nanoscale·Alex Aparecido-FerreiraKazuhito Tsukagoshi
Aug 10, 2016·Journal of the Optical Society of America. A, Optics, Image Science, and Vision·Mathias SchubertTino Hofmann
Aug 7, 2018·ACS Applied Materials & Interfaces·Teerayut UwannoKosuke Nagashio
Mar 20, 2020·ACS Applied Materials & Interfaces·Mengchuan TianYanqing Wu

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