Abstract
The high Z chalcohalides Hg3Q2I2 (Q = S, Se, and Te) can be regarded as of antiperovskite structure with ordered vacancies and are demonstrated to be very promising candidates for X- and γ-ray semiconductor detectors. Depending on Q, the ordering of the Hg vacancies in these defect antiperovskites varies and yields a rich family of distinct crystal structures ranging from zero-dimensional to three-dimensional, with a dramatic effect on the properties of each compound. All three Hg3Q2I2 compounds show very suitable optical, electrical, and good mechanical properties required for radiation detection at room temperature. These compounds possess a high density (>7 g/cm3) and wide bandgaps (>1.9 eV), showing great stopping power for hard radiation and high intrinsic electrical resistivity, over 1011 Ω cm. Large single crystals are grown using the vapor transport method, and each material shows excellent photo sensitivity under energetic photons. Detectors made from thin Hg3Q2I2 crystals show reasonable response under a series of radiation sources, including 241Am and 57Co radiation. The dimensionality of Hg-Q motifs (in terms of ordering patterns of Hg vacancies) has a strong influence on the conduction band structure, which gives t...Continue Reading
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Citations
Dec 10, 2019·Advanced Materials·Yonggang WangYusheng Zhao
Jul 7, 2020·Advanced Materials·Wenzhen WangJingtao Zhu
Apr 25, 2018·Nature Communications·Yihui HeMercouri G Kanatzidis
Aug 11, 2020·Angewandte Chemie·Sijie WuTao Wu
Jan 26, 2021·Journal of the American Chemical Society·Yihui HeMercouri G Kanatzidis
Mar 10, 2021·Nature Communications·Weizhao CaiShanti Deemyad
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