Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering

ACS Nano
Deborah M PaskiewiczM G Lagally

Abstract

Many important materials cannot be grown as single crystals in bulk form because strain destroys long-range crystallinity. Among them, alloys of group IV semiconductors, specifically SiGe alloys, have significant technological value. Using nanomembrane strain engineering methods, we demonstrate the fabrication of fully elastically relaxed Si(1-x)Ge(x) nanomembranes (NMs) for use as growth substrates for new materials. To do so, we grow defect-free, uniformly and elastically strained SiGe layers on Si substrates and release the SiGe layers to allow them to relax this strain completely as free-standing NMs. These SiGe NMs are transferred to new hosts and bonded there. We confirm the high structural quality of these new materials and demonstrate their use as substrates for technologically relevant epitaxial films by growing strained-Si layers and thick, lattice-matched SiGe alloy layers on them.

References

Apr 16, 1990·Physical Review Letters·D J Eaglesham, M Cerullo
Aug 20, 1990·Physical Review Letters·Y MoM G Lagally
May 30, 1994·Physical Review Letters·J Tersoff, F K LeGoues
Sep 2, 1996·Physical Review Letters·A J SteinfortR L Johnson
Apr 11, 2006·Nature Materials·Michelle M RobertsMax G Lagally
May 12, 2006·Nature·Rune S JacobsenAnders Bjarklev
May 17, 2011·Physical Review Letters·C B SimmonsM A Eriksson

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Citations

Nov 17, 2012·Nanoscale Research Letters·Francesca Cavallo, Max G Lagally
Mar 7, 2014·ACS Nano·Cicek BoztugRoberto Paiella
Jul 6, 2014·Nano Letters·Sung Hyun ParkJung Han
Dec 15, 2015·Nano Letters·Deborah PaskiewiczDillon D Fong
Feb 28, 2014·Scientific Reports·D M PaskiewiczM G Lagally
Dec 18, 2016·Proceedings of the National Academy of Sciences of the United States of America·Marziyeh ZamiriSanjay Krishna
Dec 21, 2011·Physical Review Letters·Ö O SoykalCharles Tahan

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