Depth profile characterization of ultra shallow junction implants

Analytical and Bioanalytical Chemistry
Philipp HönickeGiancarlo Pepponi

Abstract

A need for analysis techniques, complementary to secondary ion mass spectrometry (SIMS), for depth profiling dopants in silicon for ultra shallow junction (USJ) applications in CMOS technologies has recently emerged following the difficulties SIMS is facing there. Grazing incidence X-ray fluorescence (GIXRF) analysis in the soft X-ray range is a high-potential tool for this purpose. It provides excellent conditions for the excitation of the B-K and the As-L(iii,ii) shells. The X-ray standing wave (XSW) field associated with GIXRF on flat samples is used here as a tunable sensor to obtain information about the implantation profile because the in-depth changes of the XSW intensity are dependent on the angle of incidence. This technique is very sensitive to near-surface layers and is therefore well suited for the analysis of USJ distributions. Si wafers implanted with either arsenic or boron at different fluences and implantation energies were used to compare SIMS with synchrotron radiation-induced GIXRF analysis. GIXRF measurements were carried out at the laboratory of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II using monochromatized undulator radiation of well-known radiant power and spe...Continue Reading

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Citations

May 3, 2013·The Review of Scientific Instruments·J LubeckJ Weser
Oct 13, 2015·Analytical Chemistry·Yves KayserJakub Szlachetko
Dec 17, 2016·Journal of Applied Crystallography·Anton HaaseFrank Scholze
May 28, 2019·Rapid Communications in Mass Spectrometry : RCM·Xiaomei ZengXiangheng Xiao
Apr 17, 2014·Materials·Matthias MüllerClaudia Fleischmann
Jan 21, 2017·Analytical Chemistry·J BaumannI Mantouvalou

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