Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates

Nanoscale
Chunrui MaJudy Wu

Abstract

A transition in source-drain current vs. back gate voltage (ID-VBG) characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates (GFET/PLZT-Gate) during a vacuum annealing process developed to systematically remove the polar molecules adsorbed on the GFET channel surface. This allows the extrinsic and intrinsic hysteresis on GFET/PLZT-gate devices to detangle and the detection of the dynamic switch of electric dipoles using GFETs, taking advantage of their high gating efficiency on ferroelectric gate. A model of the charge trapping and pinning mechanism is proposed to successfully explain the transition. In response to pulsed VBG trains of positive, negative, as well as alternating polarities, respectively, the source-drain current ID variation is instantaneous with the response amplitude following the ID-VBG loops measured by DC VBG with consideration of the remnant polarization after a given VBG pulse when the gate electric field exceeds the coercive field of the PLZT. A detection sensitivity of around 212 dipole per μm...Continue Reading

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Citations

Jan 19, 2016·Scientific Reports·Rongtao LuJudy Z Wu
Apr 19, 2017·Advanced Materials·Jake D MehewSaverio Russo
Jun 18, 2019·Advanced Materials·Kyoseung SimCunjiang Yu
Feb 18, 2016·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Xia Hong
Jun 24, 2017·Physical Review Letters·Zhiyong XiaoXia Hong
Jan 29, 2021·Physical Chemistry Chemical Physics : PCCP·Jin YuanZi-Cheng Wei
Sep 19, 2017·ACS Applied Materials & Interfaces·Guangliang HuJudy Wu

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