Detection of the insulating gap and conductive filament growth direction in resistive memories

Nanoscale
E YalonD Ritter

Abstract

Filament growth is a key aspect in the operation of bipolar resistive random access memory (RRAM) devices, yet there are conflicting reports in the literature on the direction of growth of conductive filaments in valence change RRAM devices. We report here that an insulating gap between the filament and the semiconductor electrode can be detected by the metal-insulator-semiconductor bipolar transistor structure, and thus provide information on the filament growth direction. Using this technique, we show how voltage polarity and electrode chemistry control the filament growth direction during electro-forming. The experimental results and the nature of a gap between the filament and an electrode are discussed in light of possible models of filament formation.

References

Nov 2, 2007·Nature Materials·Rainer Waser, Masakazu Aono
Jan 19, 2010·Nature Nanotechnology·Deok-Hwang KwonCheol Seong Hwang
Nov 11, 2011·Nanotechnology·Antonio C TorrezanR Stanley Williams
Mar 15, 2012·Nature Communications·Yuchao YangWei Lu
Jul 14, 2012·Reports on Progress in Physics·Doo Seok JeongCheol Seong Hwang
Dec 28, 2012·Nature Nanotechnology·J Joshua YangDuncan R Stewart
Apr 4, 2013·Physical Chemistry Chemical Physics : PCCP·Stephan MenzelIlia Valov
Sep 24, 2013·Nanoscale·Yuchao Yang, Wei Lu
Jun 26, 2014·Nature·Ed Yong

❮ Previous
Next ❯

Citations

Apr 13, 2017·Physical Chemistry Chemical Physics : PCCP·Catarina DiasJoão Ventura
Oct 26, 2018·Faraday Discussions·Stephan MenzelUlrich Böttger
Sep 14, 2017·ACS Applied Materials & Interfaces·Yiming SunFeng Pan
Mar 31, 2018·ACS Applied Materials & Interfaces·Sven DirkmannThomas Mussenbrock

❮ Previous
Next ❯

Related Concepts

Related Feeds

Bipolar Disorder

Bipolar disorder is characterized by manic and/or depressive episodes and associated with uncommon shifts in mood, activity levels, and energy. Discover the latest research this illness here.