Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

Nanoscale
Jr-Hau HeI-Min Chan

Abstract

We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10(-6)Ω cm(2). Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.

References

Nov 25, 2005·Journal of the American Chemical Society·Jr H HeZhong L Wang
Jul 22, 2006·Analytical Chemistry·Fernando PatolskyCharles M Lieber
Mar 16, 2007·Nano Letters·C SociD Wang
Jul 22, 2011·ACS Nano·Cheng-Ying ChenZhong Lin Wang

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