PMID: 19928133Nov 26, 2009Paper

Direct evidences of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

Journal of Nanoscience and Nanotechnology
J C GonzálezA G de Oliveira

Abstract

Direct evidences of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B are presented in this work. Scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of an In0.86Ga0.14As alloy. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.

Citations

May 18, 2010·Journal of the American Chemical Society·Ren Bin YangKornelius Nielsch
Nov 2, 2017·Beilstein Journal of Nanotechnology·Perumal KannappanJoaquim P Leitão

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