Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles

Nano Letters
Aiming YanAlex Zettl

Abstract

Monolayer molybdenum disulfide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method, which is scalable with suitably structured substrates. The growth mechanisms for single-layer and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5°) between the MoS2 and h-BN lattices prevail. Moreover, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents an important advancement toward controllable and scalable MoS2-based electronic devices.

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Citations

Apr 14, 2017·Nanoscale·Benjamin J IrvingTomas Polcar
Dec 15, 2016·Nature Communications·Qiang ZhangChih-Kang Shih
Jun 22, 2017·Journal of the American Chemical Society·Deyi FuKian Ping Loh
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Apr 20, 2018·Chemical Society Reviews·Xiao ZhangHua Zhang
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Sep 7, 2018·Advanced Materials·Sonali DasTania Roy
Feb 28, 2019·Advanced Materials·Xiaoxu ZhaoKian Ping Loh
Apr 11, 2019·Advanced Materials·Matthieu Fortin-DeschênesOussama Moutanabbir
Jan 24, 2017·Nanotechnology·Dmitry G KvashninAlexander G Kvashnin
Aug 18, 2020·Advanced Materials·Jia ZhangPingAn Hu
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Apr 9, 2018·The Journal of Chemical Physics·Xiong-Xiong XueLixin Zhang
Nov 18, 2018·Nanotechnology·Xinsheng WangLiming Xie
Nov 26, 2020·Nature Communications·Lufang ZhangShaoqing Xiao
Jan 14, 2021·Physical Chemistry Chemical Physics : PCCP·Shan-Shan WangShuai Dong
May 30, 2021·Advanced Materials·Jianwei BenXiaojuan Sun

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