Direct growth of single-crystalline III-V semiconductors on amorphous substrates

Nature Communications
Kevin ChenAli Javey

Abstract

The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth.

References

Mar 10, 2001·Science·Z W PanZ L Wang
Dec 4, 2012·Nature·Magnus HeurlinLars Samuelson
Apr 27, 2013·Nanotechnology·Hannah J JoyceMichael B Johnston
Jul 25, 2013·Scientific Reports·Rehan KapadiaAli Javey

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Citations

Apr 21, 2020·Soft Matter·André S NunesNuno A M Araújo
Jan 2, 2020·Proceedings of the National Academy of Sciences of the United States of America·Mark HettickAli Javey
Sep 16, 2021·ACS Applied Materials & Interfaces·Wei YanJames Bullock

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Methods Mentioned

BETA
electron dispersive spectroscopy
electron backscatter diffraction
photoluminescence imaging

Software Mentioned

Tango
Oxford Aztec

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