Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires

Nano Letters
M MontazeriCraig E Pryor

Abstract

Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations. This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.

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Citations

Aug 15, 2012·Nano Letters·Chia-Chi ChangStephen B Cronin
Aug 15, 2012·Nano Letters·Bin WeiXiaodong Han
Feb 13, 2013·Nano Letters·M N MakhoninL R Wilson
Nov 8, 2012·Nano Letters·Maaike Bouwes BavinckVal Zwiller
Dec 15, 2012·Nano Letters·Giorgio SignorelloHeike Riel
Oct 31, 2015·Nano Letters·Eric J JonesSilvija Gradečak
Jun 15, 2017·Nano Letters·Virginia Di CarloNico Lovergine
Jan 4, 2017·Nanotechnology·M S YashinskiC L Muhlstein
Apr 2, 2020·Nano Letters·Rakesh RanaAlexej Pashkin

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