Dual Functionalization of Electron Transport Layer via Tailoring Molecular Structure for High Performance Perovskite Light Emitting Diodes

ACS Applied Materials & Interfaces
Lei CaiBaoquan Sun

Abstract

Great progress in modification and optimization of the emission layer (EML) in the perovskite light emitting diodes (PeLEDs) results in a significant improvement in the device efficiency. However, so far less attention has been paid on the exploration of hole/electron injection and transporting layers to maximize the utilization of the charge carriers for efficient and stable PeLEDs. At present, the low electron mobility of the electron transport layer (ETL) causes an unbalanced charge injection, and the defects at the ETL/perovskite interface limits the formation and utilization of generated excitons. Here, a series of compounds (BPBiTP, BPBiPN, and BPBiPA) flanked by diphenyl-1H-benzo[d]imidazole end groups have been developed as ETL materials, where the bridging units (benzene, naphthalene, anthracene) are manipulated to achieve dual functionality, namely the high charge carrier mobility and effective passivation of perovskite surface. The coordinating end groups effectively reduce the trap state density at the interface of ETL and EML due to their strong nucleophilic quality. H-aggregation of anthracene units and large transfer integral in BPBiPA leads to its superior electron mobility of 8.4 ×10-4 cm2V-1s-1 in the solid st...Continue Reading

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