Dynamic response of thin-film semiconductors to AC voltage perturbations

Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry
Fabio La MantiaFrancesco Di Quarto

Abstract

A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intended to be with respect to the screening length, which is a function of the volumetric charge density. In amorphous materials the transition potential at which the semiconducting to insulating behaviour is observed is dependent on the frequency. An approximated analytical solution for the capacitance of the junction is calculated. The model for finite thickness semiconductors is successfully applied to the study of anodic Nb(2)O(5), formed in phosphate buffer 0.5 M aqueous solution up to different formation potentials (namely 5, 10 and 20 V vs. ...Continue Reading

Citations

Jan 1, 1997·Life Sciences·A de Mendonça, J A Ribeiro
Apr 1, 1996·Trends in Neurosciences·W C Abraham, M F Bear
Apr 8, 1998·Trends in Neurosciences·P Tompa, P Friedrich

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