Effects of nonlinear loss in high-Q Si ring resonators for narrow-linewidth III-V/Si heterogeneously integrated tunable lasers

Optics Express
Chao XiangJohn E Bowers

Abstract

High-Q Si ring resonators play an important role in the development of widely tunable heterogeneously integrated lasers. However, while a high Q-factor (Q > 1 million) is important for ring resonators in a laser cavity, the parasitic high-power density in a Si resonator can deteriorate the laser performance at high power levels due to nonlinear loss. Here, we experimentally show that this detrimental effect can happen at moderate power levels (a few milliwatts) where typical heterogeneously integrated lasers work. We further compare different ring resonators, including extended Si ring resonators and Si3N4 ring resonators and provide practical approaches to minimize this effect. Our results provide explanations and guidelines for high-Q ring resonator designs in heterogeneously integrated tunable lasers, and they are also applicable for hybrid integrated butt-coupled lasers.

References

Feb 18, 2005·Nature·Haisheng RongMario Paniccia
Oct 4, 2004·Optics Express·Tal CarmonKerry Vahala
Dec 10, 2007·Optics Express·Q LinGovind P Agrawal
Feb 8, 2013·Optics Express·Jared F BautersJohn E Bowers
Feb 12, 2014·Proceedings of the National Academy of Sciences of the United States of America·Christos Theodoros SantisAmnon Yariv
Aug 9, 2018·Proceedings of the National Academy of Sciences of the United States of America·Christos T SantisAmnon Yariv
Jan 11, 2019·Scientific Reports·Aldenor G SantosJailson B de Andrade
Feb 9, 2019·Optics Express·Weiqiang XieJohn Bowers
Aug 16, 2019·Optics Letters·Lin ChangJohn E Bowers

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Citations

Feb 12, 2021·Nature Communications·Matthew W PuckettDaniel J Blumenthal

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