Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode

Optics Express
Chih-Yen ChenXiaodong Hu

Abstract

The counteraction between the increased carrier localization effect due to the change of composition nanostructure in the quantum wells (QWs), which is caused by the thermal annealing process, and the enhanced quantum-confined Stark effect in the QWs due to the increased piezoelectric field, which is caused by the increased p-type layer thickness, when the p-type layer is grown at a high temperature on the InGaN/GaN QWs of a high-indium light-emitting diode (LED) is demonstrated. Temperature- and excitation power-dependent photoluminescence (PL) measurements are performed on three groups of sample, including 1) the samples with both effects of thermal annealing and increased p-type thickness, 2) those only with the similar thermal annealing process, and 3) those with increased overgrowth thickness and minimized thermal annealing effect. From the comparisons of emission wavelength, internal quantum efficiency (IQE), spectral shift with increasing PL excitation level, and calibrated activation energy of carrier localization between various samples in the three groups, one can clearly see the individual effects of thermal annealing and increased p-type layer thickness. The counteraction leads to increased IQE and blue-shifted emis...Continue Reading

Citations

Apr 4, 2015·Optics Express·Chun-Han LinC C Yang
Dec 22, 2016·ACS Applied Materials & Interfaces·Wen-Cheng KeTae-Yeon Seong

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