Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Materials
Joachim Piprek

Abstract

Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements.

References

Mar 4, 2011·Optics Express·Han-Youl Ryu, Jong-In Shim
Apr 27, 2016·Scientific Reports·Bertrand Rouet-LeducColin J Humphreys
Jun 30, 2019·Optics Express·Shengjun ZhouSheng Liu
Sep 29, 2020·Journal of Physics. Condensed Matter : an Institute of Physics Journal·Michael O'DonovanStefan Schulz

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