Electrical contact barriers between 3D metal and layered SnS2

ACS Applied Materials & Interfaces
Chengzhai LvHan-Chun Wu

Abstract

Field-effect transistors derived from traditional 3D semiconductors are rapidly approaching their fundamental limits. Layered semiconducting materials have emerged as promising candidates to replace restrictive 3D semiconductor materials. However, contacts between metals and layered materials deviate from Schottky-Mott behavior when determined by transport methods, while X-ray photoelectron spectroscopy measurements suggest that the contacts should be at the Schottky limit. Here, we present a systematic investigation on the influence of metal selection when electrically contacting SnS2, a layered metal dichalcogenide semiconductor with the potential to replace silicon. It is found that the electrically measured barrier height depends also weakly on the work function of the metal contacts with slopes of 0.09 and -0.34 for n-type and p-type Schottky contacts respectively. Based on the Kirchhoff voltage law and considering a current path induced by metallic defects, we found that the Schottky barrier still follows the Schottky-Mott limits and the electrically measured barrier height mainly originates from the van der Waals gap between metal and SnS2, and the slope depends on the magnitude of the van der Waals capacitance.

References

Jul 20, 2005·Proceedings of the National Academy of Sciences of the United States of America·K S NovoselovA K Geim
Feb 1, 2011·Nature Nanotechnology·B RadisavljevicA Kis
Nov 8, 2012·Nature Nanotechnology·Qing Hua WangMichael S Strano
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Nov 16, 2016·Science·Sujay B DesaiAli Javey

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Citations

Apr 3, 2021·Nature Communications·Wenjie YanHan-Chun Wu
May 20, 2020·ACS Applied Materials & Interfaces·Wen-Jie YanHan-Chun Wu

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