Electrical transport properties of Ge-doped GaN nanowires

Nanotechnology
M SchäferM Eickhoff

Abstract

The conductivity and charge carrier concentration of single GaN nanowires (NWs) doped with different concentrations of Ge were determined by four-point resistivity and temperature-dependent Seebeck coefficient measurements. We observed high carrier concentrations ranging from 9.1 × 10(18) to 5.5 × 10(19) cm(-3), well above the Mott density of 1.6 × 10(18) cm(-3), and conductivities up to 625 S cm(-1) almost independent of the NW diameter. The weak temperature dependence of the conductivity between 2 and 10 K could be assigned to the formation of an impurity band. For the sample with the highest conductivity metallic behaviour was found, indicated by a positive temperature coefficient of the resistivity. The near band edge emission analyzed by micro-photoluminescence spectroscopy showed only a small increase of the peak width up to 70 meV and no spectral shift for carrier concentrations up to 5.5 × 10(19) cm(-3). The latter was attributed to the simultaneous influence of band filling, band gap renormalization, and strain.

References

May 12, 2005·Nano Letters·Raffaella CalarcoHans Lüth
May 27, 2011·Nanotechnology·J TeubertM Eickhoff
Oct 30, 2012·Nature Nanotechnology·Kristian StormLars Samuelson
Nov 14, 2012·Nano Letters·Jens WallysMartin Eickhoff

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Citations

Nov 7, 2015·Nano Letters·Matthias T ElmPeter J Klar
Oct 2, 2015·Nano Letters·Zhihua FangBruno Daudin
Aug 5, 2017·ACS Nano·Jan MüßenerMartin Eickhoff

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