Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

PloS One
Hassan Maktuff Jaber Al-Ta'iiYusoff Mohd Amin

Abstract

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship betwee...Continue Reading

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Citations

May 11, 2016·Scientific Reports·Hassan Maktuff Jaber Al-Ta'iiVengadesh Periasamy
Jan 19, 2018·Scientific Reports·Nastaran RizanVengadesh Periasamy
Jun 18, 2021·Biosensors & Bioelectronics·Sachindra Nath SarangiSukanta Kumar Tripathy
Aug 14, 2020·Langmuir : the ACS Journal of Surfaces and Colloids·Koji NakanoRyoichi Ishimatsu

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Methods Mentioned

BETA
Polymerase Chain Reaction
PCR

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