Emission efficiency limit of Si nanocrystals

Scientific Reports
Rens LimpensTom Gregorkiewicz

Abstract

One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use of a low-temperature hydrogen passivation treatment we demonstrate a maximum emission quantum efficiency of approximately 35%. This is the highest value ever reported for this type of material. By cross-correlating PL lifetime with EQE values, we obtain a comprehensive understanding of the efficiency limiting processes induced by Pb-defects. We establish that the observed record efficiency corresponds to an interface density of Pb-centers of 1.3 × 10(12) cm(12), which is 2 orders of magnitude higher than for the best Si/SiO2 interface. This result implies that Si nanocrystals with up to 100% emission efficiency are feasible.

References

Nov 15, 1988·Physical Review. B, Condensed Matter·K L Brower
Oct 11, 2011·Nature Nanotechnology·D TimmermanT Gregorkiewicz
Apr 10, 2014·Journal of Physics. Condensed Matter : an Institute of Physics Journal·K DohnalováK Kůsová
Dec 5, 2014·Advanced Materials·Wei SunGeoffrey A Ozin
Nov 26, 2015·Scientific Reports·Rens LimpensTom Gregorkiewicz

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Citations

Jun 27, 2017·ACS Applied Materials & Interfaces·Zhenxu LinJohn Robertson
Apr 5, 2018·Physical Chemistry Chemical Physics : PCCP·Marco CannasMaria Li Vigni
Apr 17, 2018·Nano Letters·Gerard M CarrollNathan R Neale

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