Enhanced optical bistability from self-heating due to free carrier absorption in substrate removed silicon ring modulators

Optics Express
Xuezhe ZhengAshok V Krishnamoorthy

Abstract

We show enhanced optical bistability induced by free carrier absorption from junction doping in substrate-removed silicon ring modulators. Such linear thermal effects dominate the loss in high-speed depletion silicon ring modulators. Optical bistability was observed with about 100 μW of input optical power. We further show that such thermal interactions causes data-dependent ring resonance shifts, and consequently severely degrade the data modulation quality at low speeds. The frequency response of this effect was measured to be about 100~200 kHz.

References

Nov 10, 2004·Optics Letters·Vilson R Almeida, Michal Lipson
Feb 17, 2006·Optics Letters·Qianfan Xu, Michal Lipson
Jul 23, 2007·Optics Express·Po DongMichal Lipson
Dec 10, 2007·Optics Express·Mohammad SoltaniAli Adibi
Jan 7, 2010·Optics Express·Hugo L R LiraMichal Lipson
Aug 20, 2010·Optics Express·Sasikanth ManipatruniMichal Lipson
Oct 14, 2010·Optics Express·John E CunninghamAshok V Krishnamoorthy
Feb 22, 2012·Optics Letters·Lian-Wee LuoMichal Lipson

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Citations

May 15, 2015·Optics Express·Jinsoo RhimWoo-Young Choi

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