Etch Characteristics of Si and TiO<sub>2</sub> Nanostructures Using Pulse Biased Inductively Coupled Plasmas

Nanotechnology
Soo-Gang KimGeun Young Yeom

Abstract

The etch characteristics of Si and TiO2nanostructures for optical devices were investigated using pulse biased inductively coupled plasmas (ICP) with SF2/C4F8/Ar and BCl3/Ar, respectively, and the results were compared with those etched using continuous wave (CW) biased ICP. By using pulse biasing compared to CW biasing in the etching in the line/pillar nanostructures of various aspect ratios, the reduction of aspect ratio dependent etching (ARDE), therefore, uniform etch depths for nanostructures with different pattern widths, and the improvement of the etch profiles without notching were obtained not only for silicon nanostructures but also for TiO2nanostructures. It is investigated that the improvement of etch profiles and less ARDE effect by using pulse biasing are related to the decreased surface charging by neutralization of the surface and the improved radical adsorption (or etch byproduct removal) on the etched surfaces during the pulse-off period for the pulse biasing compared to CW biasing.

References

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