Fabrication, characterization, and kinetic study of vertical single-crystalline CuO nanowires on Si substrates.

Nanoscale Research Letters
Shao-Liang Cheng, Ming-Feng Chen

Abstract

We report here on the first study of the growth kinetics of high-yield, vertical CuO nanowires on silicon substrates produced by the process of thermal oxidation. The length of the CuO nanowires could be tuned from several to tens of micrometers by adjusting the oxidation temperature and time. The grown CuO nanowires were determined to be single-crystalline with different axial crystallographic orientations. After a series of scanning electron microscopy examinations, the average length of CuO nanowires produced at each temperature was found to follow a parabolic relationship with the oxidation time. The parabolic growth rate at different oxidation temperatures was measured. The activation energy for the growth of CuO nanowires calculated from an Arrhenius plot was found to be about 174.2 kJ/mole. In addition, the current-voltage characterization indicated that the sample with high-density CuO nanowires exhibited ohmic behavior, and its resistance was found to significantly decrease with increasing environmental temperature. The result can be attributed to an increase in the number of carriers at higher temperatures.

References

Jan 1, 2009·Nanoscale Research Letters·Shiva HullavaradBruce Claflin
Jun 30, 2011·Nanoscale Research Letters·Haitao ZhuCanying Zhang
Mar 5, 2008·Nanotechnology·Young-Jin ChoiJong-Heun Lee
Aug 24, 2011·Nanoscale Research Letters·Soumen Dhara, Pk Giri
Dec 14, 2011·Nanoscale Research Letters·Andreas Othonos, Matthew Zervos

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Citations

Mar 24, 2017·Water Science and Technology : a Journal of the International Association on Water Pollution Research·Martha Purnachander RaoSambandam Anandan
Dec 15, 2016·ACS Applied Materials & Interfaces·Ahmed Esmail ShalanHiroaki Misawa
Jun 23, 2020·ACS Applied Materials & Interfaces·F AlmazánM P Pina

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Methods Mentioned

BETA
scanning electron microscopy
electron diffraction

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